SUD40N06-25L vishay siliconix document number: 70264 s-57741erev. g, 31-mar-98 www.vishay.com faxback 408-970-5600 2-1 n-channel 60-v (d-s), 175 c mosfet, logic level
v ds (v) r ds(on) ( ) i d (a) a 60 0.022 @ v gs = 10 v 30 60 0.025 @ v gs = 4.5 v 30 to-252 s gd top view drain connected to tab order number: SUD40N06-25L d g s n-channel mosfet
parameter symbol limit unit gate-source voltage v gs 20 v continuous drain current (t j = 175 c) b t c = 25 c i d 30 a continuous drain current (t j = 175 c) b t c = 100 c i d 30 a pulsed drain current i dm 100 a continuous source current (diode conduction) i s 34 avalanche current i ar 34 repetitive avalanche energy (duty cycle 1%) l = 0.1 mh e ar 58 mj maximum power dissipation t c = 25 c p d 75 w maximum power dissipation t a = 25 c p d 1.4 b , 2.5 c w operating junction and storage temperature range t j , t stg 55 to 175 c
parameter symbol limit unit maximum junction - to - ambient free air, fr4 board mount r thja 60 c/w m ax i mum j unc ti on- t o- a m bi en t free air, vertical mount r thja 110 c/w maximum junction-to-case r thjc 2.0 notes: a. package limited. b. free air, vertical mount. c. surface mounted on 1o x 1o fr4 board, t 10 sec. for spice model information via the worldwide web: http://www.vishay.com/www/product/spice.htm free datasheet http:///
SUD40N06-25L vishay siliconix www.vishay.com faxback 408-970-5600 2-2 document number: 70264 s-57741erev. g, 31-mar-98
parameter symbol test condition min typ a max unit static drain-source breakdown voltage v (br)dss v gs = 0 v, i d = 250 a 60 v gate threshold voltage v gs(th) v ds = v gs , i d = 250 a 1.0 2.0 3.0 v gate-body leakage i gss v ds = 0 v, v gs = 20 v 100 na zgvl dic i v ds = 60 v, v gs = 0 v 1 a zero gate voltage drain current i dss v ds = 60 v, v gs = 0 v, t j = 125 c 50 a v ds = 60 v, v gs = 0 v, t j = 175 c 150 on-state drain current b i d(on) v ds = 5 v, v gs = 10 v 20 a dis os r i b v gs = 10 v, i d = 20 a 0.022 drain source on state resistance b r ds( ) v gs = 10 v, i d = 20 a, t j = 125 c 0.043 drain-source on-state resistance b r ds(on) v gs = 10 v, i d = 20 a, t j = 175 c 0.053 v gs = 4.5 v, i d = 20 a 0.025 forward transconductance b g fs v ds = 15 v, i d = 20 a s dynamic input capacitance c iss v 0 v v 25 v f 1 mh 1800 f output capacitance c oss v gs = 0 v, v ds = 25 v, f = 1 mhz 350 pf reverse transfer capacitance c rss 100 total gate charge c q g v30vv10vi40a 40 60 c gate-source charge c q gs v ds = 30 v, v gs = 10 v, i d = 40 a 9 nc gate-drain charge c q gd 10 turn-on delay time c t d(on) v30vr09 10 20 rise time c t r v dd = 30 v, r l = 0.9 i20av 10vr25 9 20 ns turn-off delay time c t d(off) dd , l i d 20 a, v gen = 10 v, r g = 2.5 28 50 ns fall time c t f 7 15 source-drain diode ratings and characteristics (t c = 25 c) pulsed current i sm 20 a diode forward voltage v sd i f = 20 a, v gs = 0 v 1.0 1.5 v reverse recovery time t rr i f = 20 a, di/dt = 100 a/ s 48 100 ns notes: a. for design aid only; not subject to production testing. b. pulse test; pulse width 300 s, duty cycle 2%. c. independent of operating temperature. free datasheet http:///
SUD40N06-25L vishay siliconix document number: 70264 s-57741erev. g, 31-mar-98 www.vishay.com faxback 408-970-5600 2-3
output characteristics transfer characteristics capacitance gate charge transconductance on-resistance vs. drain current v ds drain-to-source voltage (v) drain current (a) i d v gs gate-to-source voltage (v) drain current (a) i d gate-to-source voltage (v) on-resistance ( q g total gate charge (nc) i d drain current (a) v ds drain-to-source voltage (v) c capacitance (pf) r ds(on) w ) v gs transconductance (s) g fs 0 20 40 60 80 100 0246810 0 2 4 6 8 10 0 1020304050 0 10 20 30 40 50 60 70 0 1224364860 0 0.01 0.02 0.03 0.04 0 15304560 0 15 30 45 60 0123456 25 c 55 c t c = 125 c v ds = 30 v i d = 20 a v gs = 10, 9, 8, 7 v v gs = 4.5 v c rss t c = 55 c 25 c 125 c 3 v 4 v 5 v 6 v v gs = 10 v 0 500 1000 1500 2000 2500 3000 0 102030405060 c iss c oss i d drain current (a) free datasheet http:///
SUD40N06-25L vishay siliconix www.vishay.com faxback 408-970-5600 2-4 document number: 70264 s-57741erev. g, 31-mar-98
on-resistance vs. junction temperature source-drain diode forward voltage (normalized) on-resistance ( t j junction temperature ( c) v sd source-to-drain voltage (v) r ds(on) w ) source current (a) i s 0 0.5 1.0 1.5 2.0 2.5 50 25 0 25 50 75 100 125 150 175 100 10 1 0.3 0.6 0.9 1.2 1.5 v gs = 10 v i d = 20 a t j = 25 c t j = 150 c
drain current vs. case temperature normalized thermal transient impedance, junction-to-case square wave pulse duration (sec) 2 1 0.1 0.01 10 4 10 3 10 2 10 1 normalized effective transient thermal impedance 3 safe operating area t c case temperature ( c) v ds drain-to-source voltage (v) drain current (a) i d drain current (a) i d 200 10 0.1 0 10 20 30 40 50 0 25 50 75 100 125 150 175 0.2 0.1 0.05 0.02 single pulse duty cycle = 0.5 0.1 1 10 100 1 limited by r ds(on) 1 100 t c = 25 c single pulse 1 ms 10 ms 100 ms dc, 1 s 100 s free datasheet http:///
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